This set of VLSI Multiple Choice Questions & Answers (MCQs) focuses on “FET Logic Inverter”. 1. Inverter uses D-MESFET as a) load b) switching device c) controller d) amplifier 2. The allowable output voltage is limited by a) load resistance b) load capacitance c) barrier height d) material used for barrier 3. For depletion mode … Read more
This set of Basic VLSI Questions and Answers focuses on “Transconductance and Voltage Swing”. 1. Gain of MESFET is _______ to transconductance. a) directly proportional b) indirectly proportional c) exponentially dependent d) does not depend on 2. Transconductance gives the relationship of a) Ids and Vds b) Vds and Vgs c) Ids and Vgs d) … Read more
This set of VLSI Assessment Questions and Answers focuses on “Device Modelling and Performance Estimation – 2”. 1. Depletion mode MESFET operates as a) reverse biased b) forward biased c) both reverse and forward biased d) none of the mentioned 2. Pinch-off voltage is equal to a) built-in potential b) applied voltage c) sum of … Read more
This set of VLSI Multiple Choice Questions & Answers (MCQs) focuses on “Device Modelling and Performance Estimation -1”. 1. MESFETs are _______ modulation devices. a) channel area b) channel voltage c) channel current d) channel variation 2. Gallium arsenide have _____ regions of operation. a) two b) three c) four d) five 3. Drain to … Read more
This set of VLSI Questions and Answers for Aptitude test focuses on “GaAs Fabrication -3”. 1. Which has a lightly doped channel? a) E-MOSFET b) D-MOSFET c) E-JFET d) CE-JFET 2. To begin conduction, E-MOSFET requires a) negative gate voltage b) positive gate voltage c) negative drain voltage d) positive drain voltage 3. Wafer preparation … Read more
This set of VLSI Questions and Answers for Campus interviews focuses on “GaAs Fabrication -2”. 1. The ohmic contacts are deposited by a) decomposition b) evaporation c) deposition d) mixing 2. Which has high parasitic gate resistance? a) platinum b) gold c) titanium d) aluminium 3. Which is used as the top layer? a) gold … Read more
This set of VLSI Multiple Choice Questions & Answers (MCQs) focuses on “GaAs Fabrication -1”. 1. Gallium arsenide crystals are grown from a) boron oxide b) silicon oxide c) silicon nitride d) boron nitride 2. Wafers in GaAs fabrication are thermally unstable. a) true b) false 3. The sequence of the steps followed in fabrication … Read more
This set of VLSI Multiple Choice Questions & Answers (MCQs) focuses on “MESFET”. 1. The gallium arsenide field effect transistor is ________ majority carrier device. a) bulk current insulation b) bulk current conduction c) bulk voltage insulation d) bulk voltage conduction 2. Method used for fabrication of GaAs FET is a) ion implantation b) disposition … Read more
This set of VLSI Questions and Answers for Entrance exams focuses on “Technology Development in VLSI Structures-2”. 1. Which has low power dissipation? a) CMOS b) bipolar c) GaAs d) NMOS 2. Which device has low input impedance? a) CMOS b) bipolar c) GaAs d) NMOS 3. Which device has low noise margin? a) CMOS … Read more
This set of VLSI Multiple Choice Questions & Answers (MCQs) focuses on “Technology Development in VLSI Structures-1 “. 1. The GaAs fabrication has _________ gate geometry. a) less than one micron b) less than two micron c) more than one micron d) more than two micron 2. The GaAs structure has upto _______ metal. a) … Read more
