VLSI Questions and Answers – Area Capacitance

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This set of VLSI Multiple Choice Questions & Answers (MCQs) focuses on “Area Capacitance”.

1. Conducting layer is separated from substrate using
a) dielectric layer
b) silicon layer
c) metal layer
d) diffusion layer
View Answer

Answer: a
Explanation: Conducting layer is separated from the substrate by using dielectric or insulating layer as both are electrical insulators that can be polarized by an applied electric field.
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2. Gate to channel capacitance of 5 micron technology is _____ pF X 10(-4) (micrometer)2.
a) 1
b) 2
c) 4
d) 0.4
View Answer

Answer: c
Explanation: Gate to channel capacitance of 5 micron technology is 4 pF X 10(-4) (micrometer)2. It is the standard typical calculated value.

3. Area capacitance of diffusion region of 2 micron technology is _____ pF X 10(-4) (micrometer)2.
a) 2
b) 2.75
c) 3.75
d) 4.75
View Answer

Answer: c
Explanation: Area capacitane of diffusion region of 2 micron technology is 3.75 pF X 10(-4) (micrometer)2.

4. Relative capacitance of diffusion region of 5 micron technology is
a) 1
b) 0.25
c) 1.25
d) 2
View Answer

Answer: b
Explanation: The relative capacitance of diffusion region of 5 micron technology is 0.25. The relative value is calculated by comparing two values of same type.

5. A feature size square has
a) L > W
b) W > L
c) L = W
d) L > d
View Answer

Answer: c
Explanation: A feature size square has L = W and its gate to channel capacitance value is called as square Cg.
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6. The standard square Cg value of a 5 micron technology is
a) 0.01 pF
b) 0.1 pF
c) 1 pF
d) 10 pF
View Answer

Answer: a
Explanation: The standard square Cg value of a 5 micron technology is 0.01 pF. This standard square Cg value can be calculated by using the area of standard square value and the capacitance value.

7. The standard square Cg value of a 1.2 micron technology is
a) 0.01 pF
b) 0.0023 pF
c) 0.023 pF
d) 0.23 pF
View Answer

Answer: b
Explanation: The standard square Cg value of a 1.2 micron technology is 0.0023 pF.

8. Relative area for L = 20λ and W = 3λ is
a) 10
b) 15
c) 1/15
d) 1/10
View Answer

Answer: b
Explanation: Relative area for L = 20λ and W = 3λ is = (20λ X 3λ) / (2λ X 2λ) = 15. Relative area has no unit as two quantities of same type have been used.

9. The value of gate capacitance is
a) 0.25 square Cg
b) 1 square Cg
c) 1.25 square Cg
d) 1.5 square Cg
View Answer

Answer: b
Explanation: The value of gate capacitance is one square Cg. This is the standard value.

10. Delay unit of 5 micron technology is
a) 1 nsec
b) 0.1 nsec
c) 0.01 nsec
d) 1 sec
View Answer

Answer: b
Explanation: Delay unit of 5 micron technology is 0.1 nsec.
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11. Delay unit of 1.2 micron technology is
a) 0.064 nsec
b) 0.0064 nsec
c) 0.046 nsec
d) 0.0046 nsec
View Answer

Answer: c
Explanation: The delay unit of 1.2 micron technology is 0.046 nsec.

12. What is the transition point of an inverter?
a) Vdd
b) 0.5 Vdd
c) 0.25 Vdd
d) 2 Vdd
View Answer

Answer: b
Explanation: The transition point of an inverter is 0.5 Vdd. Transition point is the point where different phases of same substance can be obtained in equilibrium.

13. What is the desired or safe delay value for 5 micron technology?
a) 0.3 nsec
b) 0.5 nsec
c) 0.1 nsec
d) 0.2 nsec
View Answer

Answer: a
Explanation: The desired or safe delay value for 5 micron technology is 0.3 nsec.

Sanfoundry Global Education & Learning Series – VLSI.
To practice all areas of VLSI, here is complete set of 1000+ Multiple Choice Questions and Answers.

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Manish Bhojasia, a technology veteran with 20+ years @ Cisco & Wipro, is Founder and CTO at Sanfoundry. He is Linux Kernel Developer & SAN Architect and is passionate about competency developments in these areas. He lives in Bangalore and delivers focused training sessions to IT professionals in Linux Kernel, Linux Debugging, Linux Device Drivers, Linux Networking, Linux Storage, Advanced C Programming, SAN Storage Technologies, SCSI Internals & Storage Protocols such as iSCSI & Fiber Channel. Stay connected with him @ LinkedIn