VLSI Questions and Answers – GaAs Fabrication -3

This set of VLSI Questions and Answers for Aptitude test focuses on “GaAs Fabrication -3”.

1. Which has a lightly doped channel?
View Answer

Answer: a
Explanation: The E-MOSFET structure is similar to that of D-MOSFET except for a shallower and more lightly doped channel.

2. To begin conduction, E-MOSFET requires
a) negative gate voltage
b) positive gate voltage
c) negative drain voltage
d) positive drain voltage
View Answer

Answer: b
Explanation: In E-MOSFET channel is in pinch-off at zero gate voltage. A positive gate voltage is required for the channel to begin conduction.

3. Wafer preparation takes place in
a) first-level metal phase
b) second-level metal phase
c) encapsulation phase
d) ion implantation phase
View Answer

Answer: c
Explanation: Encapsulation phase is the first phase and it includes wafer preparation. Encapsulation is a process of deposition of first-level insulator Si3N4.

4. Steps involved in ion implantation phase is
a) metallization
b) anneal
c) alignment mark mask
d) lift-off
View Answer

Answer: b
Explanation: Anneal is a process involved in ion implantation phase along with other processes like si+ implant mask, channel implant, source drain mask, etc.

5. For the formation of E-MESFET _______ is used.
a) n- implantation
b) n+ implantation
c) p- implantation
d) p+ implantation
View Answer

Answer: a
Explanation: A n- implantation is used for formation of E-MESFET and n+ implantation for the formation of D-MESFET.
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6. To activate a dopant, _______ is necessary.
a) low temperature stable gate
b) low temperature stable drain
c) high temperature stable gate
d) high temperature stable drain
View Answer

Answer: c
Explanation: The anneal cycle requires a stable temperature of 850 degree celcius to activate the dopants it is necessary to choose high temperature stable gate.

7. The voltage swing for schottky barrier gate should be
a) low
b) high
c) very high
d) very low
View Answer

Answer: a
Explanation: Schottky barrier gates on GaAs cannot be forward biased above 0.7 to 0.8 volt, the permissible voltage swing should be relatively low.

8. The E-MESFET is defined by intersection of
a) red and yellow masks
b) green and red masks
c) brown and red masks
d) green and yellow masks
View Answer

Answer: b
Explanation: E-MESFET is defined by intersection of green and red masks and D-MESFET is defined by intersection of green, red and yellow masks.

9. E-JFET technology has
a) low voltage swing
b) high current swing
c) high power requirements
d) high voltage swing
View Answer

Answer: d
Explanation: E-JFET technology for ultra high speed VLSI has reduced power requirements with larger logic voltage swings.

10. In a CE-JFET, the ratio of electron mobility to hole mobility is equal to
a) 4
b) 10
c) 5
d) 20
View Answer

Answer: b
Explanation: In a CE-JFET, the ratio of effective channel electron mobility of the n-channel device to hole mobility of the p-channel device is equal to 10.

11. Equal number of p and n devices in a device will consume
a) small area
b) large area
c) all of the mentioned
d) none of the mentioned
View Answer

Answer: b
Explanation: The circuits requiring equal numbers of p and n devices will consume large areas. Thus one must use other design methods such as precharge techniques.

12. In high electron mobility transistor, the electrons are
a) far apart
b) high mobility
c) near by and low mobility
d) far apart and high mobility
View Answer

Answer: b
Explanation: The electrons in high electron mobility transistor are spacially separated from ionized donors and they exhibit high mobility.

Sanfoundry Global Education & Learning Series – VLSI.

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Manish Bhojasia - Founder & CTO at Sanfoundry
Manish Bhojasia, a technology veteran with 20+ years @ Cisco & Wipro, is Founder and CTO at Sanfoundry. He lives in Bangalore, and focuses on development of Linux Kernel, SAN Technologies, Advanced C, Data Structures & Alogrithms. Stay connected with him at LinkedIn.

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