VLSI Questions and Answers – Metal Oxide Semiconductor (MOS) Transistor – 2

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This set of VLSI Multiple Choice Questions & Answers (MCQs) focuses on “Metal Oxide Semiconductor (MOS) Transistor – 2”.

1. The current through the n-MOS transistor will flow when:
a) Vgs > Vtreshold, Vds=0
b) Vgd < Vtreshold, Vds=0
c) Vgs > Vtreshold, Vds>0
d) Vgd > Vtreshold, Vds<0
View Answer

Answer: c
Explanation: The current flows through the n-MOS transistor when Vgs > Vtreshold, Vds>0.
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2. The p-MOS Transistor is said to be in Saturation mode when:
a) Vdsp > Vgsp – Vtp
b) Vgsp < Vdsp –Vtp
c) Vgsp > Vtp
d) Vdsp < Vgsp – Vtp
View Answer

Answer: d
Explanation: The pMOS transistor is in Saturation mode when Vdsp < Vgsp – Vtp and Vgsp < Vtp.

3. The Fermi potential of the p-type MOSFET is:
a) φfp = (kT/q)ln(ND/NA)
b) φfp = (kT/q)ln(NA/ND)
c) φfp = (kT/q)ln(NA/ni)
d) φfp = (kT/q)ln(ni/NA)
View Answer

Answer: d
Explanation: The Fermi potential of the p-type semiconductor is φfp = (kT/q)ln(ni/NA) where ni denotes the intrinsic carrier concentration of silicon, NA is acceptor concentration, ND is Donor Concentration.

4. The Fermi potential(φfp) for the n-type MOSFET is:
a) φfp = (kT/q)ln(ND/NA)
b) φfp = (kT/q)ln(NA/ND)
c) φfp = (kT/q)ln(ND/ni)
d) φfp = (kT/q)ln(ni/ND)
View Answer

Answer: c
Explanation: The Fermi potential of the p-type semiconductor is φfp = (kT/q)ln(ND/ni) where ni denotes the intrinsic carrier concentration of silicon, NA is acceptor concentration, ND is Donor Concentration.
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5. The principle of the MOSFET operation is:
a) Control the conduction of current between the source and the drain, using the potential difference applied at the gate voltage as a control variable
b) Control the current conduction between the source and the gate, using the electric field applied at the drain voltage as a control variable
c) Control the current conduction between the PN junction, using the electric field generated by the bias voltage as a control variable
d) Control the current conduction between the PN junctions, using the electric potential generated by the gate voltage as a control variable
View Answer

Answer:a
Explanation: By varying the gate voltage the current between the source and drain are varied.

6. The conduction of current IDS depends on:

i) Gate to source voltage
ii) Drain to source voltage
iii) Bulk to source voltage
iv) Threshold voltage
v) Dimensions of MOSFET

a) Only i
b) Only i, ii and iii
c) Only v
d) All of the mentioned
View Answer

Answer: d
Explanation: The current depends on Vgs, Vds, Vbs, Vt and dimensions of MOSFET.
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7. The impedance at the input of n-MOS transistor circuit is:
a) Lesser than p-MOS transistor
b) Greater than BJT transistor
c) Lesser than JFET transistor
d) Zero
View Answer

Answer: b
Explanation: The impedance at the input of n-MOS transistor is more than BJT transistor.

8. The depletion mode n-MOS differs from enhancement mode n-MOS in:
a) Threshold voltage
b) Channel Length
c) Switching time
d) None of the mentioned
View Answer

Answer: a
Explanation: If n-MOS operates with negative threshold voltage then it is in depletion mode. If n-MOS operates with positive threshold voltage then it is in enhancement mode.

Sanfoundry Global Education & Learning Series – VLSI.

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Manish Bhojasia, a technology veteran with 20+ years @ Cisco & Wipro, is Founder and CTO at Sanfoundry. He is Linux Kernel Developer & SAN Architect and is passionate about competency developments in these areas. He lives in Bangalore and delivers focused training sessions to IT professionals in Linux Kernel, Linux Debugging, Linux Device Drivers, Linux Networking, Linux Storage, Advanced C Programming, SAN Storage Technologies, SCSI Internals & Storage Protocols such as iSCSI & Fiber Channel. Stay connected with him @ LinkedIn