VLSI Questions and Answers – Sheet Resistance

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This set of VLSI Multiple Choice Questions & Answers (MCQs) focuses on “Sheet Resistance”.

1. Area A of a slab can be given as ____________
a) t * W
b) t / W
c) L * W
d) L * t
View Answer

Answer: a
Explanation: Area A of a uniform slab is given as the product of thickness t and width W of the slab. Its unit is (micrometer)2.
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2. For 5 micron technology, What is the Rs value for a metal?
a) 0.03
b) 0.04
c) 0.02
d) 0.01
View Answer

Answer: a
Explanation: For a 5 micron technology, the Rs value for a metal is 0.03. It is the standard typical sheet resistance values.

3. For 2 micron technology, what is the Rs value for polysilicon?
a) 10-40
b) 20-50
c) 15-30
d) 15-100
View Answer

Answer: c
Explanation: For 2 micron technology, the Rs value for polysilicon is 15-30.

4. Which has higher Rs values?
a) n-diffusion
b) p-diffusion
c) n-diffusion & p-diffusion
d) none of the mentioned
View Answer

Answer: b
Explanation: The Rs values for p-diffusion is 2.5 times greater than that of the n-diffusion.

5. For 1.2 micron technology, what is the Rs value for diffusion?
a) 20-40
b) 20-45
c) 15-30
d) 25-50
View Answer

Answer: b
Explanation: For 1.2 micron technology, the Rs value for diffusion is 20-45.
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6. What is the relationship between channel resistance and sheet resistance?
a) R = Rs
b) R = Z*Rs
c) R = Z/Rs
d) R = Rs/Z
View Answer

Answer: b
Explanation: The relationship between channel resistance and sheet resistance can be given as R = Z*Rs. Sheet resistance is a measure of the resistance of thin films that are nominally uniform in thickness.

7. Z can be given as the ration of ___________
a) lower channel by upper channel
b) upper channel by lower channel
c) all of the mentioned
d) none of the mentioned
View Answer

Answer: b
Explanation: Z (length to width) ratio can be given as the ratio of upper channel to lower channel. It is just a numerical quantity and has no unit.

8. Deposition of metal or silicon alloy can be done by ___________
a) sputtering
b) evaporation
c) sputtering and evaporation
d) deposition should not be made
View Answer

Answer: c
Explanation: Deposition of metal or silicon alloy can be done by either sputtering or evaporation. Sputtering is a process whereby particles are ejected from a solid target material due to bombardment of the target by energetic particles.

9. Deposition of metal can be done by co-evaporation.
a) true
b) false
View Answer

Answer: a
Explanation: Deposition of metal or silicon alloy can also be done by co-evaporation from the elements.
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10. Processing of the device is better using ___________
a) polysilicon
b) silicides
c) polysilicon & silicides
d) none of the mentioned
View Answer

Answer: a
Explanation: Processing of the device is better using polysilicon than silicides even though the properties of silicides are better than polysilicon.

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Manish Bhojasia, a technology veteran with 20+ years @ Cisco & Wipro, is Founder and CTO at Sanfoundry. He is Linux Kernel Developer & SAN Architect and is passionate about competency developments in these areas. He lives in Bangalore and delivers focused training sessions to IT professionals in Linux Kernel, Linux Debugging, Linux Device Drivers, Linux Networking, Linux Storage, Advanced C Programming, SAN Storage Technologies, SCSI Internals & Storage Protocols such as iSCSI & Fiber Channel. Stay connected with him @ LinkedIn