This set of VLSI Multiple Choice Questions & Answers (MCQs) focuses on “Sheet Resistance”.
1. Area A of a slab can be given as
a) t * W
b) t / W
c) L * W
d) L * t
View Answer
Explanation: Area A of a uniform slab is given as the product of thickness t and width W of the slab. Its unit is (micrometer)2.
2. For 5 micron technology, the Rs value for a metal is
a) 0.03
b) 0.04
c) 0.02
d) 0.01
View Answer
Explanation: For a 5 micron technology, the Rs value for a metal is 0.03. It is the standard typical sheet resistance values.
3. For 2 micron technology, the Rs value for polysilicon is
a) 10-40
b) 20-50
c) 15-30
d) 15-100
View Answer
Explanation: For 2 micron technology, the Rs value for polysilicon is 15-30.
4. Which has higher Rs values?
a) n-diffusion
b) p-diffusion
c) both of the mentioned
d) none of the mentioned
View Answer
Explanation: The Rs values for p-diffusion is 2.5 times greater than that of the n-diffusion.
5. For 1.2 micron technology, the Rs value for diffusion is
a) 20-40
b) 20-45
c) 15-30
d) 25-50
View Answer
Explanation: For 1.2 micron technology, the Rs value for diffusion is 20-45.
6. What is the relationship between channel resistance and sheet resistance?
a) R = Rs
b) R = Z*Rs
c) R = Z/Rs
d) R = Rs/Z
View Answer
Explanation: The relationship between channel resistance and sheet resistance can be given as R = Z*Rs. Sheet resistance is a measure of resistance of thin films that are nominally uniform in thickness.
7. Z can be given as the ration of
a) lower channel by upper channel
b) upper channel by lower channel
c) all of the mentioned
d) none of the mentioned
View Answer
Explanation: Z ( length to width ) ratio can be given as the ratio of upper channel to lower channel. It is just a numerical quantity and has no unit.
8. Deposition of metal or silicon alloy can be done by
a) sputtering
b) evaporation
c) sputtering and evaporation
d) deposition should not be made
View Answer
Explanation: Deposition of metal or silicon alloy can be done by either sputtering or evaporation. Sputtering is a process whereby particles are ejected from a solid target material due to bombardment of the target by energetic particles.
9. Deposition of metal can be done by co-evaporation.
a) true
b) false
View Answer
Explanation: Deposition of metal or silicon alloy can also be done by co-evaporation from the elements.
10. Processing of the device is better using
a) polysilicon
b) silicides
c) both of the mentioned
d) none of the mentioned
View Answer
Explanation: Processing of the device is better using polysilicon than silicides even though the properties of silicides are better than polysilicon.
Sanfoundry Global Education & Learning Series – VLSI.
To practice all areas of VLSI, here is complete set of 1000+ Multiple Choice Questions and Answers.
