VLSI Questions and Answers – Gallium Arsenide VLSI

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This set of VLSI Multiple Choice Questions & Answers (MCQs) focuses on “Gallium Arsenide VLSI”.

1. Gallium arsenide has _______ electron mobility.
a) high speed
b) low speed
c) smaller
d) larger
View Answer

Answer: a
Explanation: The high speed electron mobility of gallium arsenide with respect to silicon is better for innovative systems.
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2. Which technology has semi-insulating substrate?
a) silicon
b) silicon nitride
c) gallium oxide
d) gallium arsenide
View Answer

Answer: d
Explanation: Gallium arsenide has semi-insulating substrate with consequent lower parasitics which improves its opto-electrical properties.

3. Gallium is produced as a byproduct of
a) aluminium production process
b) sulphur production process
c) nitrogen production process
d) oxygen production process
View Answer

Answer: a
Explanation: Gallium which is a toxic material is produced as a byproduct of zinc production process and aluminium production processes.

4. Arsenic is produced from
a) AsS3
b) As2S3
c) As2S
d) As2S3 or As2S4
View Answer

Answer: d
Explanation: Arsenic which is also very toxic material is produced from the ores such as As2S3 or As2S4.

5. The first process involved in the production of arsenic is
a) reduction
b) oxidation
c) combination
d) diffusion
View Answer

Answer: b
Explanation: Firstly, the ores go through the oxidation process and then reduction with carbon is done to produce arsenic.
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6. Gallium has a
a) positively charged nucleus +31
b) positively charged nucleus +33
c) negatively charged nucleus -31
d) negatively charged nucleus -33
View Answer

Answer: a
Explanation: Gallium has a positively charged nucleus of +31 whereas arsenic has positively charged nucleus of +33.

7. Energy level of electrons are dictated by
a) electron’s charges
b) electron’s momentum
c) electron’s mass
d) electron’s weight
View Answer

Answer: b
Explanation: Each electron in its relationship with its parent nucleus exhibits an energy value. This energy is dictated by electron’s momentum and its physical proximity to the nucleus.

8. The energy is greater as closer the electron is to the nucleus.
a) true
b) false
View Answer

Answer: a
Explanation: The closer the electron is to the nucleus the greater is the holding influence of the nucleus and greater is the energy required for the electron to break loose and become free.

9. Which are more stronger?
a) outer orbit electrons
b) outer orbit protons
c) inner orbit electrons
d) inner orbit protons
View Answer

Answer: a
Explanation: Outer orbit electrons are said to be stronger than inner orbit electrons because of their ability to break loose from the parent atom. These are called as valence electrons.
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10. Gallium arsenide is made up of
a) single element
b) compound of two elements
c) compound of three elements
d) compound of four elements
View Answer

Answer: b
Explanation: Gallium arsenide is a compound semiconductor that is defined as a compound of two elements whereas silicon is a single element semiconductor.

11. Gallium has ______ valence electrons.
a) two
b) three
c) four
d) five
View Answer

Answer: b
Explanation: Gallium has three valence electrons and arsenic has five valence electrons. These two are combined to form gallium arsenide.

12. Gallium arsenide is a
a) binary semiconductor
b) trinary semiconductor
c) ternary semiconductor
d) unary semiconductor
View Answer

Answer: a
Explanation: Gallium arsenide is a binary semiconductor and high temperatures should be avoided which might result in dissociation of the surface.

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Manish Bhojasia, a technology veteran with 20+ years @ Cisco & Wipro, is Founder and CTO at Sanfoundry. He is Linux Kernel Developer & SAN Architect and is passionate about competency developments in these areas. He lives in Bangalore and delivers focused training sessions to IT professionals in Linux Kernel, Linux Debugging, Linux Device Drivers, Linux Networking, Linux Storage, Advanced C Programming, SAN Storage Technologies, SCSI Internals & Storage Protocols such as iSCSI & Fiber Channel. Stay connected with him @ LinkedIn