This set of VLSI Multiple Choice Questions & Answers (MCQs) focuses on “Noise in MOS Devices”. 1. Noise in VLSI circuits mean: a) Unwanted signals that arise due to vibration in the passive circuits b) Unknown signal that limits the minimum signal level that a circuit can process with acceptable quality c) Signal which undergoes … Read more
This set of VLSI Multiple Choice Questions & Answers (MCQs) focuses on “Noise Margin”. 1. Noise Margin is: a) Amount of noise the logic circuit can withstand b) Difference between VOH and VIH c) Difference between VIL and VOL d) All of the Mentioned 2. The VIL is found from transfer characteristic of inverter by: … Read more
This set of VLSI Multiple Choice Questions & Answers (MCQs) focuses on “MOS Transistor Threshold Voltage”. 1. The electrical equivalent component for MOS structure is: a) Resistor b) Capacitor c) Inductor d) Switch 2. The Fermi potential is the function of: a) Temperature b) Doping concentration c) Difference between Fermi level and intrinsic Fermi level … Read more
This set of VLSI Multiple Choice Questions & Answers (MCQs) focuses on “nMOS and Complementary MOS (CMOS)”. 1. The n-MOS invertor is better than BJT in terms of: a) Fast switching time b) Low power loss c) Smaller overall layout area d) All the mentioned 2. The n-MOS invertor consists of n-MOS transistor as driven … Read more
This set of VLSI Multiple Choice Questions & Answers (MCQs) focuses on “Metal Oxide Semiconductor (MOS) Transistor – 2”. 1. The current through the n-MOS transistor will flow when: a) Vgs > Vtreshold, Vds=0 b) Vgd < Vtreshold, Vds=0 c) Vgs > Vtreshold, Vds>0 d) Vgd > Vtreshold, Vds<0 2. The p-MOS Transistor is said … Read more
This set of VLSI Multiple Choice Questions & Answers (MCQs) focuses on “Metal Oxide Semiconductor (MOS) Transistor – 1”. 1. The conductivity of the pure silicon is raised by: a) Introducing Dopants (impurities) b) Increasing Pressure c) Decreasing Temperature d) Deformation of Lattice 2. The n-type semiconductor have _______ as majority carriers. a) Holes b) … Read more
This set of VLSI Multiple Choice Questions & Answers (MCQs) focuses on “FET”. 1. Field effect transistor uses ________ to control the shape. a) electric field b) magnetic field c) current distribution d) voltage distribution 2. Field effect transistors are known as a) unipolar device b) bipolar device c) tripolar device d) multipolar device 3. … Read more
This set of VLSI Multiple Choice Questions & Answers (MCQs) focuses on “GaAs MESFET Logics”. 1. Normally-on logic uses a) depletion mode MESFET b) enhancement mode MESFET c) depletion mode FET d) enhancement mode FET 2. Which is the approach used for normally-off logic? a) capacitor diode FET logic b) buffered FET logic c) direct-coupled … Read more
This set of VLSI Problems focuses on ” MESFET Design-2″. 1. In the ring diagram, green line is used to represent a) E-MESFET b) D-MESFET c) Interconnection d) Transistor 2. E-type and D-type is joined together using a) metal 1 b) metal 2 c) vias d) interconnectors 3. What is the intermediate stage in converting … Read more
This set of VLSI Multiple Choice Questions & Answers (MCQs) focuses on “MESFET Design-1”. 1. MESFET circuits are formed on _____ layers. a) two b) three c) four d) five 2. If gate-metal layer is in contact with the implant layer _____ is formed. a) diode b) transistor c) switch d) buffer 3. When insulating … Read more
