This set of Manufacturing Processes Multiple Choice Questions & Answers (MCQs) focuses on “Electrochemical Etching – 11”. 1. mpSi and μpSi structures are used to develop distributed Bragg reflectors. a) True b) False 2. The structure of the mpSi- or μpSi-based DBR affects their refractive indices. a) True b) False 3. DBR structures based on_____ … Read more
This set of Manufacturing Processes Puzzles focuses on “Electrochemical Etching – 10”. 1. Pore formation in μpSi is independent of quantum confinement. a) True b) False 2. μpSi structures have _____________ a) high porosity b) longer life c) organised pores d) low density 3. In the quantum confinement model for μpSi structures, energy band gap … Read more
This set of Manufacturing Processes Multiple Choice Questions & Answers (MCQs) focuses on “Electrochemical Etching – 9”. 1. Bending curvature of silicon wafers varies ______ with the specific area of the MpSi structure. a) linearly b) inversely c) cubically d) it not affected by specific area 2. Silicon oxide layer can be removed using HF … Read more
This set of Manufacturing Processes Multiple Choice Questions & Answers (MCQs) focuses on “Electrochemical Etching – 8”. 1. Cone-like pores can be obtained by using Lehmann’s law. a) True b) False 2. Progressively modified illumination intensity approach can be used to develop some optical structures. a) True b) False 3. Progressively modified illumination intensity approach … Read more
This set of Manufacturing Processes Multiple Choice Questions & Answers (MCQs) focuses on “Electrochemical Etching – 7”. 1. Morphology of μpSi and mpSi can be defined by a concrete spatial distribution. a) True b) False 2. The resulting pore structure in pSi is intrinsically dependent on the doping level of the Si wafer. a) True … Read more
This set of Manufacturing Processes test focuses on “Electrochemical Etching – 6”. 1. Which of the following is true about chemical dissolution of hydrogen-terminated silicon in HF based solutions. a) Si atoms are replaced by F atoms b) H atoms are replaced by F atoms c) F− ions are replaced by Si atoms d) H … Read more
This set of Manufacturing Processes Multiple Choice Questions & Answers (MCQs) focuses on “Electrochemical Etching – 5”. 1. Electronic grade silicon wafers are produced by Czochralski growth method. a) True b) False 2. Porous silicon structures are produced by electrochemical etching of silicon wafers in organic solutions of_____ a) acrylonitrile b) benzene c) formaldehyde d) … Read more
This set of Manufacturing Processes Multiple Choice Questions & Answers (MCQs) focuses on “Electrochemical Etching – 4”. 1. In reactive ion etching, argon gas is ionized by bombarding with electrons. a) True b) False 2. In deposition process, material is added unlike etching where material is removed. a) True b) False 3. Which of the … Read more
This set of Manufacturing Processes Questions and Answers focuses on “Electrochemical Etching – 3”. 1. Which of the following holds true about wet etching? a) Wet etching is used for large pattern sizes b) It is an anisotropic process c) It forms straight sidewalls d) Undercutting and resist peel off can happen if time is … Read more
This set of Manufacturing Processes Multiple Choice Questions & Answers (MCQs) focuses on “Electrochemical Etching – 2”. 1. Etching process should be selective to the material that has to be removed. a) True b) False 2. _______________ is commonly used as a mask for Si etching. a) Silicon dioxide b) Silicon nitride c) Silicone gel … Read more
