Manufacturing Processes Questions and Answers – Electrochemical Etching – 5

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This set of Manufacturing Processes Multiple Choice Questions & Answers (MCQs) focuses on “Electrochemical Etching – 5”.

1. Electronic grade silicon wafers are produced by Czochralski growth method.
a) True
b) False
View Answer

Answer: a
Explanation: Typically, electronic grade silicon wafers (high purity silicon 99.9999999 %—9 N) are produced by Czochralski growth method. In this process, a cylindrical ingot of high purity monocrystalline silicon is formed by pulling a seed crystal from a bath composed of polysilicon.
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2. Porous silicon structures are produced by electrochemical etching of silicon wafers in organic solutions of_____
a) acrylonitrile
b) benzene
c) formaldehyde
d) dimethylformamide
View Answer

Answer: d
Explanation: Typically, porous silicon structures are produced by electrochemical etching of silicon wafers in organic solutions of acetonitrile (CH3CN) or dimethylformamide (C3H7NO) containing hydrofluoric acid (HF).

3. It is mandatory to consider all the safety aspects related to HF handling during etching of Si.
a) True
b) False
View Answer

Answer: a
Explanation: HF is highly corrosive towards living tissues and its inhalation, ingestion or skin contact are all extremely hazardous and can be lethal. HF should be handled under a hood with proper ventilation, wearing personal HF gas monitor with audible alarm, safety sensor for liquids and proper personal protective equipment such as safety goggles, face shield, chemically resistant butyl rubber gloves and apron.
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4. The oxide later formed on commercial Si does not affect the etching of Si.
a) True
b) False
View Answer

Answer: b
Explanation: The native oxide layer formed on commercial silicon wafers under ambient atmospheric conditions must be removed. The most widespread method to remove this oxide layer is the so-called RCA cleaning process. This process is divided into three steps: namely; (i) removal of organic contaminants, (ii) removal of the native oxide layer and (iii) removal of ionic contaminations.

5. Which of the following can lead to broken porous silicon samples?
a) High current density
b) High concentration of electrolyte
c) Inappropriate design of cell
d) High temperature of the cell
View Answer

Answer: c
Explanation: An inappropriate design of the cell can lead to broken samples, leaky set-ups and corroded contacts. Note that aspects such as materials, contacts and sealants are critical in the design of the electrochemical cell used to produce porous Si by electrochemical or chemical etching approaches.
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6. Cell material must be resistant to HF solution.
a) True
b) False
View Answer

Answer: a
Explanation: since most common acid electrolytes used to prepare porous Si are HF-based solutions, the materials of choice used to fabricate the body of the etching cells are resistant to HF. The most representative examples of these are polyvinyl chloride (PVC) and polytetrafluoroethylene (PTFE).

7. Which of the following materials is suitable for making sealant while working with HF based solutions?
a) Silicone rubber
b) Polyurethane
c) PVC
d) Acrylonitrile-butadiene copolymer
View Answer

Answer: d
Explanation: Sealants are standard black O-rings made of acrylonitrile-butadiene copolymer (Perbunan) or vinylidene fluoride-hexafluoropropylene (Viton) are preferred as they are stable in HF at concentrations up to 50 %.
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8. Which of the following materials is the better choice for making conductors in cells used to produce pSi by electrochemical etching?
a) Nickel
b) Gold
c) Copper
d) Vanadium
View Answer

Answer: b
Explanation: It is critical to consider the resistance of the metal used as a contact towards corrosion since a continuous exposure to the etching electrolyte can degrade its integrity with use and thus its performance. Typically, noble metals such as platinum or gold are the best choice as they are inert. Other materials such as stainless steel, brass, tungsten or aluminium can also be used.

9. Hydrogen-terminated silicon surfaces are ____________
a) hydrophobic
b) hydrophilic
c) hydropic
d) deliquescent
View Answer

Answer: a
Explanation: After the cleaning step and immersion in HF solutions, the silicon wafer surface is terminated with hydrogen atoms (Si–H). Hydrogen-terminated silicon surfaces are hydrophobic, showing a large contact angle for a drop of water [34, 35]. Silicon surfaces dipped in HF or an ammonium fluoride (NH4F) show equivalent hydrophobic character.
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10. Roughness of the hydrophobic surfaces formed after dipping silicon in HF solution is dependent on the type of etchant.
a) True
b) False
View Answer

Answer: a
Explanation: The roughness of these surfaces is highly dependent on the chemical treatment and type of etchant used. While NH4F provides atomically flat surfaces for (111) and (100) oriented silicon surfaces, a treatment with HF creates surfaces with nanometric roughness.

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Manish Bhojasia - Founder & CTO at Sanfoundry
Manish Bhojasia, a technology veteran with 20+ years @ Cisco & Wipro, is Founder and CTO at Sanfoundry. He is Linux Kernel Developer & SAN Architect and is passionate about competency developments in these areas. He lives in Bangalore and delivers focused training sessions to IT professionals in Linux Kernel, Linux Debugging, Linux Device Drivers, Linux Networking, Linux Storage, Advanced C Programming, SAN Storage Technologies, SCSI Internals & Storage Protocols such as iSCSI & Fiber Channel. Stay connected with him @ LinkedIn | Youtube | Instagram | Facebook | Twitter