This set of Microwave Engineering online test focuses on “Single Stage Transistor Amplifier Design”. 1. The overall gain of a transistor is always a fixed value and cannot be changed as per design requirements. a) True b) False 2. The frequency response of an amplifier is _______ a) Wide band b) Narrow band c) Pass … Read more
This set of Microwave Engineering Multiple Choice Questions & Answers (MCQs) focuses on “Stability Circles”. 1. For a transistor amplifier to be stable, either the input or the output impedance must have a real negative part. a) True b) False 2. ____________ condition, if met then the transistor can be impedance matched for any load. … Read more
This set of Microwave Engineering Multiple Choice Questions & Answers (MCQs) focuses on “Two Port Power Gains”. 1. The power gain G of a two port network is independent of the source impedance of the two port network. a) True b) False 2. __________ is defined as the ratio of power available from the two … Read more
This set of Microwave Engineering Multiple Choice Questions & Answers (MCQs) focuses on “Micro-wave Tubes”. 1. The production of power at higher frequencies is much simpler than production of power at low frequencies. a) True b) False 2. Microwave tubes are power sources themselves at higher frequencies and can be used independently without any other … Read more
This set of Microwave Engineering Multiple Choice Questions & Answers (MCQs) focuses on “Monolithic Microwave Integrated Circuits”. 1. Progress in ________ and other related semiconductors material processing led to the feasibility of monolithic microwave integrated circuits. a) GaAs b) Silicon c) Germanium d) GaAlAs 2. MMICs are high cost devices that involve complex fabrication methods … Read more
This set of Microwave Engineering Questions and Answers for Campus interviews focuses on “Hybrid Microwave integrated Circuits”. 1. In the course of development of microwave circuits, two distinct types of microwave integrated circuits have been developed according to the application requirements. a) true b) false 2. __________ is an important consideration for a hybrid integrated … Read more
This set of Microwave Engineering Multiple Choice Questions & Answers (MCQs) focuses on “Metal Oxide Semiconductor FET”. 1. There exists no difference between the construction of GaAs MESFET and silicon MOSFET except for the material used in their construction. a) True b) False 2. MOSFETs can provide a power of several hundred watts when the … Read more
This set of Microwave Engineering Multiple Choice Questions & Answers (MCQs) focuses on “Field Effect Transistors”. 1. Field effect transistors are different from BJTs in that they are _________ a) monopolar devices b) bipolar devices c) bidirectional device d) none of the mentioned 2. GaAs MESFET –metal semiconductor field effect transistor are one of the … Read more
This set of Microwave Engineering Multiple Choice Questions & Answers focuses on “Heterojunction BJT – 2”. 1. The hybrid-π model of a BJT is useful for analysis at all frequency ranges and variation of other transistor parameters. a) true b) false 2. If the S11 and S22 parameters of a common emitter operated BJT is … Read more
This set of Microwave Engineering Multiple Choice Questions & Answers (MCQs) focuses on “Heterojunction BJT – 1”. 1. BJTs are bipolar junction transistors. The name bipolar is given because: a) they are made of n type and p type semiconductor b) they have holes as charge carriers c) they have electrons as charge carriers d) … Read more
