This set of FACTS Multiple Choice Questions & Answers (MCQs) focuses on “Power Semiconductor Devices – IGCT, IGBT and MCT – Set 3”.
1. The MOS structure in both IGBT and MTO is not fabricated on its total device surface.
a) True
b) False
View Answer
Explanation: The MOS structure fabrication in IGBT and MTO are not alike. The MOS structure in IGBT is designed not to be fabricated on its total device surface. On the other hand, the MOS structure in MTO is fabricated on its total device surface.
2. GTO exhibits lower forward conduction losses than that of IGBTs.
a) True
b) False
View Answer
Explanation: GTO exhibits lower forward conduction losses than that of IGBTs. The GTO comes with its inherent high voltage capability. Also it exhibits advantage of high current capability.
3. The residual charge on the anode side during turning-off of MCT causes a delay in its turning-on.
a) True
b) False
View Answer
Explanation: The residual charge on the anode side during turning-off of MCT does not cause any delay in its turning-on. But this delay due to residual charge on the anode side during turning-off is present in other advanced thyristor devices. Thus MCT is at an advantageous position than other advanced thyristor devices.
4. Positive voltage pulse turns off IGBT and zero voltage turns it on.
a) True
b) False
View Answer
Explanation: Positive voltage pulse DOES NOT turn off IGBT and zero voltage DOES NOT turn it on. Actually positive voltage pulse turns on IGBT and zero voltage turns it off. IGBT exhibits unipolar voltage-withstanding capability.
5. Positive voltage pulse turns off MCT and negative voltage pulse turns MCT on.
a)True
b) False
View Answer
Explanation: Positive voltage pulse DOES NOT turn off MCT and negative voltage pulse DOES NOT turn MCT on. Positive voltage pulse turns on MCT and negative voltage pulse turns MCT off. MCT exhibits unipolar voltage-withstanding capability.
6. ________ voltage pulse turns on MTO.
a) Positive
b) Negative
c) Zero
d) Either negative or positive
View Answer
Explanation: Positive voltage pulse turns on MTO. Negative voltage pulse turns off MTO. Unlike GTO, it does not exhibit unidirectional current capability.
7. ________ voltage pulse turns on ETO.
a) Positive
b) Negative
c) Zero
d) Either negative or positive
View Answer
Explanation: Positive voltage pulse turns on ETO. Negative voltage pulse turns off ETO. Unlike GTO, it does not exhibit unidirectional current capability.
8. ________ voltage pulse turns on SITH.
a) Positive
b) Negative
c) Zero
d) Either negative or positive
View Answer
Explanation: Positive voltage pulse turns on SITH. Negative voltage pulse turns off SITH. SITH exhibits a unidirectional current capability.
9. Which of the following exhibits controlled turning-on and off characteristics and also continuous gate signal requirement?
a) diode
b) SCR
c) GTO
d) BJT
View Answer
Explanation: Out of the given options, only BJT exhibits controlled turning-on and off characteristics and also continuous gate signal requirement. Diode exhibits uncontrolled turning-on and off characteristics. So diode does not have continuous gate signal requirement.
10. Which of the following exhibits controlled turning-on and off characteristics and also continuous gate signal requirement?
a) diode
b) SCR
c) GTO
d) MOSFET
View Answer
Explanation: Out of the given options, only MOSFET exhibits controlled turning-on and off characteristics and also continuous gate signal requirement. SCR exhibits controlled turning-on and uncontrolled turning-off characteristics. So SCR does not have continuous gate signal requirement.
11. Which of the following exhibits controlled turning-on and off characteristics and also continuous gate signal requirement?
a) diode
b) SCR
c) GTO
d) IGBT
View Answer
Explanation: Out of the given options, only IGBT exhibits controlled turning-on and off characteristics and also continuous gate signal requirement. GTO exhibits controlled turning-on and off characteristics. But it does not require continuous gate signal.
12. Which of the following exhibits controlled turning-on and off characteristics and also continuous gate signal requirement?
a) diode
b) SCR
c) SITH
d) SIT
View Answer
Explanation: Out of the given options, only SIT exhibits controlled turning-on and off characteristics and also continuous gate signal requirement. SITH exhibits controlled turning-on and off characteristics. But it does not require continuous gate signal.
13. Which of the following exhibits controlled turning-on and off characteristics and also pulse gate requirement?
a) BJT
b) MOSFET
c) MCT
d) SIT
View Answer
Explanation: Out of the given options, only MCT exhibits controlled turning-on and off characteristics and also pulse gate requirement. BJT exhibits controlled turning-on and off characteristics. But it does not require pulse gate signal.
14. Which of the following exhibits controlled turning-on and off characteristics and also pulse gate requirement?
a) BJT
b) MOSFET
c) GTO
d) SIT
View Answer
Explanation: Out of the given options, only GTO exhibits controlled turning-on and off characteristics and also pulse gate requirement. SIT exhibits controlled turning-on and off characteristics. But it does not require pulse gate signal.
15. Positive voltage pulse turns off MOSFET and zero voltage turns it on.
a) True
b) False
View Answer
Explanation: Positive voltage pulse DOES NOT turn off MOSFET and zero voltage DOES NOT turn it on. Actually positive voltage pulse turns on MOSFET and zero voltage turns it off. MOSFET exhibits unipolar voltage-withstanding capability.
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