Electronic Devices and Circuits Questions and Answers – The Body Effect

«
»

This set of Electronic Devices and Circuits Multiple Choice Questions & Answers (MCQs) focuses on “The Body Effect”.

1. The _____________ of a MOSFET is affected by the voltage which is applied to the back contact.
a) Threshold Voltage
b) Output Voltage
c) Both threshold and output voltage
d) Neither of the threshold nor the output voltage
View Answer

Answer: a
Explanation: The voltage difference between the source and the bulk, VBS changes the width of the depletion layer and therefore also the voltage across the oxide due to the change of the charge in the depletion region. This results in a difference in threshold voltage which equals the difference in charge in the depletion region divided by the oxide capacitance.

2. The variation of the threshold voltage with the applied bulk-to-source voltage is typically observed by plotting the _________________ as a function of the source-to-drain voltage.
a) drain current
b) square root of the drain current
c) square of the drain current
d) natural logarithm of the drain current
View Answer

Answer: b
Explanation: The change in threshold current is directly proportional to the square root of the drain current. For further assistance check the mathematical expression for the same.

3. The SI units of the body effect parameter is
a) Volt
b) Volt X Volt
c) √Volt
d) It has no units
View Answer

Answer: c
Explanation: Vt = Vt0 + k[√(Vsb + 2φf) – √2φf]. In this expression k is the body effect parameter hence its units can be determined.
Note: Join free Sanfoundry classes at Telegram or Youtube
advertisement
advertisement

4. An NMOS transistor has Vt0 = 0.8 V, 2 φf = 0.7 V, and γ = 0.4 V1/2. Find Vt when VSB = 3 V.
a) 0.12 V
b) 1.23 V
c) 2.34 V
d) 3.45 V
View Answer

Answer: b
Explanation: Vt = Vt0 + k[√(Vsb + 2φf) – √2φf]. use this expression to obtain the desired result.

5. The threshold voltage is
a) Increases on increasing temperature
b) May increase or decrease on increasing temperature depending upon other factors
c) Temperature independent
d) Decreases on increasing temperature
View Answer

Answer: d
Explanation: The threshold voltage depends only on the temperature and it decreases by roughly 2 mV for every degree Celsius increase in the temperature.

6. As the voltage on the drain is increased, a value is reached at which the pn junction between the drain region and substrate suffers avalanche breakdown known as
a) Weak avalanche
b) Strong avalanche
c) Weak storm
d) Punch-through
View Answer

Answer: a
Explanation: As the voltage on the drain is increased, a value is reached at which the pn junction between the drain region and substrate suffers avalanche breakdown. This breakdown usually occurs at voltages of 20 V to 150 V and results in a somewhat rapid increase in current (known as a weak avalanche).

7. A breakdown effect that occurs in modern devices at low voltages (of around 20 V) is
a) Weak avalanche
b) Strong avalanche
c) Weak storm
d) Punch-through
View Answer

Answer: d
Explanation: Punch-through occurs in devices with relatively short channels when the drain voltage is increased to the point that the depletion region surrounding the drain region extends through the channel to the source. The drain current then increases rapidly. Normally, punch-through does not result in permanent damage to the device.
advertisement

8. At ______________ the drain current is no longer related to the Vgs by square law relationship.
a) When the temperature is high (around 700 Celsius)
b) When temperature is very low (around -50 Celsius)
c) Velocity saturation
d) None of the mentioned
View Answer

Answer: c
Explanation: At velocity saturation the current depends linearly on the Vgs.

9. In MOSFETs a breakdown may occur at around 30 V. This is due to
a) Velocity saturation
b) Breakdown of the gate diode
c) Sudden decrease in the depletion region
d) Fall of the threshold voltage due to impurities
View Answer

Answer: b
Explanation: The breakdown of the oxide at the gate may occur when the voltage is around 30 V. This may also permanently damage the device.
advertisement

10. Which of the below issues may not be experienced when using MOSFETs?
a) Weak avalanche
b) Velocity saturation
c) Punch-through
d) All of the mentioned
View Answer

Answer: d
Explanation: All of the mentioned are some of the common issues that one may face while dealing with MOSFETs.

Sanfoundry Global Education & Learning Series – Electronic Devices and Circuits.

To practice all areas of Electronic Devices and Circuits, here is complete set of 1000+ Multiple Choice Questions and Answers.

advertisement
advertisement
Subscribe to our Newsletters (Subject-wise). Participate in the Sanfoundry Certification contest to get free Certificate of Merit. Join our social networks below and stay updated with latest contests, videos, internships and jobs!

Youtube | Telegram | LinkedIn | Instagram | Facebook | Twitter | Pinterest
Manish Bhojasia - Founder & CTO at Sanfoundry
Manish Bhojasia, a technology veteran with 20+ years @ Cisco & Wipro, is Founder and CTO at Sanfoundry. He lives in Bangalore, and focuses on development of Linux Kernel, SAN Technologies, Advanced C, Data Structures & Alogrithms. Stay connected with him at LinkedIn.

Subscribe to his free Masterclasses at Youtube & discussions at Telegram SanfoundryClasses.