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Electronic Devices Multiple Choice Questions | MCQs | Quiz

Electronic Devices and Circuits Interview Questions and Answers
Practice Electronic Devices and Circuits questions and answers for interviews, campus placements, online tests, aptitude tests, quizzes and competitive exams.

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•   Basic Concepts
•   Analysis Method
•   Frequency Response - 1
•   Frequency Response - 2
•   Two Port Network
•   Continous Time Signals
•   Random Process
•   Noise
•   Amplitde Modulation
•   Digital Transmission
•   Semicondunctor Physics
•   Network Theroms
•   S Domain Circuit Analysis
•   Magneticaly Coupled Circuit
•   Semiconductor Electrons
•   Semiconductor Conductivity
•   Donor & Acceptor Impurities
•   Semiconductor Impurities
•   Fermi Level Impurities
•   Diffusion
•   Carrier Life Time
•   Continuity Equation
•   Hall Effect
•   P-N Qualitative Theory
•   P-N Junction Diode
•   P-N Band Structure
•   P-N Junction Components
•   P-N Diode Currents
•   Volt Ampere Characteristics
•   P-N Characteristics
•   Diode Resistance
•   Diode Capacitances
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•   Breakdown Diodes
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•   PIN Diode & Characteristics
•   Point Contact Diode
•   Ideal Diode
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•   Zener Diode
•   Rectifiers
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•   Half-Wave Rectifier
•   Full-wave Rectifier
•   Bridge Rectifier
•   Rectifier Voltmeter
•   Inductor Filters
•   Capacitor Filters
•   L-Section Filter
•   CLC Filter
•   Voltage Regulation
•   Junction Transistor
•   Transistor - Amplifier
•   Transistor Construction
•   ↓ Configurations ↓
•   Common Base
•   Common Emitter
•   Common Collector
•   CE Characteristics
•   CB Characteristics
•   DC Load Lines
•   Transistor - Switch
•   Transistor Switching Times
•   Operating Point
•   Bias Stability
•   Collector - Base Bias
•   Emitter Feedback Bias
•   Self-Bias
•   Bias Compensation
•   Thermistor Compensation
•   Thermal Runaway
•   Thermal Stability
•   Signals
•   Amplifiers
•   Amplifier Circuit Models
•   Amplifier Frequency
•   Sinusoidal Steady State
•   Ideal Operational Amplifiers
•   Inverting Configuration
•   Non Inverting Configuration
•   Difference Amplifiers
•   Integrators & Differentiators
•   Operational Amplifiers
•   Circuit Perfomance
•   Signal Operations
•   MOSFET Strucutures
•   MOSFET Characterisitcs
•   MOSFET DC Circuits
•   MOSFET Amplfier Design
•   MOSFET Signal Operation
•   MOSFET Configurations
•   MOS Amplifier Circuit
•   Discrete Circuit Amplifiers
•   Body Effect
•   BJT Device Strucutres
•   BJT Characteristics
•   BJT DC Circuits
•   BJT Amplifier Design
•   Signal Operations & Model
•   BJT Configuration
•   BJT Amplifier Circuits
•   Spread Spectrum
•   Transistor AC Analysis
•   Biasing Parameters
•   AC & DC Analysis Problem
•   Transistor Hybrid Model
•   Transistor Amplifier
•   JFET - 1
•   JFET - 2
•   Pinch off Voltage Vp
•   JFET Volt Characteristics
•   FET Small Signal Model
•   Insulated Gate FET - 1
•   Insulated Gate FET - 2
•   Common-Source Amplifier
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•   FET Biasing
•   Generalized FET Amplifier
•   Class A Signal Amplifiers
•   CE Amplifier - Resistance
•   Frequency Compensation
•   Input Bias-Bipolar Amplifier
•   Multistage Amplifier
•   Negative Feedback Property
•   Voltage Amplifiers
•   Tranconductance Amplifiers
•   Output Stage Classification
•   Class A output Stage
•   Class B Output Stage
•   Power BJTs
•   Transistor case
•   Class B Amplifiers
•   Class D Amplifiers
•   Oscillators - 1
•   Oscillators - 2

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Electronic Devices and Circuits Questions and Answers – BJTs Device Strucutres and Physical Operations

Posted on February 23, 2018 by Manish

This set of Electronic Devices and Circuits Multiple Choice Questions & Answers (MCQs) focuses on “BJTs Device Strucutres and Physical Operations”.

1. Which of the following is not a part of a BJT?
a) Base
b) Collector
c) Emitter
d) None of the mentioned
View Answer

Answer: d
Explanation: BJT consists of three semiconductor regions, base region, emitter region and collector region.
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2. The number of pn junctions in a BJT is/are
a) 1
b) 2
c) 3
d) 4
View Answer

Answer: b
Explanation: There are two pn junctions, base-emitter junction and collector-emitter junction respectively.

3. In which of the following modes can a BJT be used?
a) Cut-off mode
b) Active mode
c) Saturation mode
d) All of the mentioned
View Answer

Answer: d
Explanation: These three are the defined regions in which a BJT operates.

4. If a BJT is to be used as an amplifier, then it must operate in___________
a) Cut-off mode
b) Active mode
c) Saturation mode
d) All of the mentioned
View Answer

Answer: b
Explanation: A BJT operates as an amplifiers in active mode and as a switch in cut-off or saturation mode.

5. If a BJT is to be used as a switch, it must operate in____________
a) Cut-off mode or active mode
b) Active Mode or saturation mode
c) Cut-off mode or saturation mode
d) Cut-off mode or saturation mode or active mode
View Answer

Answer: c
Explanation: A BJT operates as an amplifiers in active mode and as a switch in cut-off or saturation mode.
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6. In cut off mode
a) The base-emitter junction is forward biased and emitter-collector junction is reversed biased
b) The base-emitter junction is forward biased and emitter-collector junction is forward biased
c) The base-emitter junction is reversed biased and emitter-collector junction is reversed biased
d) The base-emitter junction is reversed biased and emitter-collector junction is forward biased
View Answer

Answer: c
Explanation: In cut-off mode there is no current flowing through the BJT hence both junctions must be reversed biased else if either of them is forward biased then the current will flow.

7. On which of the following does the scale current not depends upon?
a) Effective width of the base
b) Charge of an electron
c) Electron diffusivity
d) Volume of the base-emitter junction
View Answer

Answer: d
Explanation: The saturation current does not depends upon the volume of the base-emitter junction. Instead it depends upon the area of the cross section of the base-emitter junction in a direction perpendicular to the flow of current.

8. On which of the following does the collector current not depends upon?
a) Saturation current
b) Thermal voltage
c) Voltage difference between the base and emitter
d) None of the mentioned
View Answer

Answer: d
Explanation: Collector current depends linearly of the saturation current and exponentially to the ratio of the voltage difference between the base and collector and thermal voltage.

9. The range for the transistor parameter also referred as common-emitter current gain has a value of__________ for common devices.
a) 50-200
b) 400-600
c) 750-1000
d) > 1000
View Answer

Answer: a
Explanation: Most commonly used transistors have a voltage gain of in the range of 50-200. Only some specially designed transistors have a transistor parameter in the range of 1000.

10. The collector current Ic is related to the emitter current Ie by a factor k. If b is the transistor parameter then the value of k in terms of b is
a) k = b/(b + 1)
b) k = (b + 1)/b
c) b = (k + 1)/k
d) None of the mentioned
View Answer

Answer: a
Explanation: Ic = k Ie (given) and also Ie = (b + 1)/b Ic (standard result). Equating these two results we get k = b/(b + 1).
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Sanfoundry Global Education & Learning Series – Electronic Devices and Circuits.

To practice all areas of Electronic Devices and Circuits, here is complete set of 1000+ Multiple Choice Questions and Answers.

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Electronic Devices and Circuits Questions and Answers – BJTs Current-Voltage Characteristics »
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Manish Bhojasia
Manish Bhojasia, a technology veteran with 20+ years @ Cisco & Wipro, is Founder and CTO at Sanfoundry. He is Linux Kernel Developer & SAN Architect and is passionate about competency developments in these areas. He lives in Bangalore and delivers focused training sessions to IT professionals in Linux Kernel, Linux Debugging, Linux Device Drivers, Linux Networking, Linux Storage, Advanced C Programming, SAN Storage Technologies, SCSI Internals & Storage Protocols such as iSCSI & Fiber Channel. Stay connected with him @ LinkedIn | Facebook | Twitter

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