Electronic Devices and Circuits Questions and Answers – Biasing in MOS Amplifier Circuit

This set of Electronic Devices and Circuits Problems focuses on “Biasing in MOS Amplifier Circuit”.

1. A discrete MOSFET common source amplifier has R_in = 2 MΩ, g_mm = 4mA/V, r_o = 100 kΩ, R_D = 10 kΩ, C_gs = 2pF and C_gd = 0.5pF. The amplifier is fed from a voltage source with an internal resistance of 500 kΩ and Is connected to the a load of 10 kΩ. The value of the overall mixed gain A_M is?
a) -15.2 V/V
b) -16.2 V/V
c) -17.2 V/V
d) -18.2 V/V
View Answer

Answer: a
Explanation:

2. A discrete MOSFET common source amplifier has R_in = 2 MΩ, g_mm = 4mA/V, r_o = 100 kΩ, R_D = 10 kΩ, C_gs = 2pF and C_gd = 0.5pF. The amplifier is fed from a voltage source with an internal resistance of 500 kΩ and Is connected to the a load of 10 kΩ. The upper 3-db frequency f_H is?
a) 11.1 kHz
b) 22.1 kHz
c) 33.1 kHz
d) 44.1 kHz
View Answer

Answer: c
Explanation:

3. The amplifier in the figure shown below is biased to operate at I_D = 1mA and g_m = 1mA/V. Find the midband gain.

a) 0.43 V/V
b) 1.43 V/V
c) 2.43 V/V
d) 3.43 V/V
View Answer

Answer: b
Explanation:

4. The amplifier in the figure shown below is biased to operate at I_D = 1mA and g_m = 1mA/V. Find the value of C_S that places F_L at 10Hz.

a) 6.57 µF
b) 12.57 µF
c) 18.57 µF
d) 24.57 µF
View Answer

Answer: c
Explanation:

5. In the NMOS transistor of the circuit shown below is biased to have g_m = 1mA/V and r₀ = 100 kΩ. Find A_M.

a) 1.02 V/V
b) 2.04 V/V
c) 3.06 V/V
d) 4.08 V/V
View Answer

Answer: c
Explanation:

6. In the NMOS transistor of the circuit shown below is biased to have g_m = 1mA/V and r₀ = 100 kΩ. Find f_H if C_gs = 1 pF and C_gd = 0.2 pF.

a) 875 kHz
b) 875 kHz
c) 875 kHz
d) 875 kHz
View Answer

Answer: c
Explanation:

7. For a particular depletion mode NMOS device, V_t = -2V, k_n W/L = 200 µA/V² and λ = 0.02V^-1. For V_DS = 2V. What is the drain current that flows
a) 104 µA
b) 208 µA
c) 312µA
d) 416 µA
View Answer

Answer: d
Explanation:

8. For a particular depletion mode NMOS device, V_t = -2V, k_n W/L = 200 µA/V² and λ = 0.02V^-1. For V_DS = 2V. What is the value of the drain current if both L and W are doubled?
a) 408 µA
b) 412 µA
c) 416 µA
d) 420 µA
View Answer

Answer: a
Explanation:

9. A depletion type N channel MOSFEt with k_nW/L = 2 mA/V² and V_t = 3V has its source and gate grounded. For V_d = 0.1V and neglecting channel length modulating effect. Find drain current.
a) 1.18 mA
b) 0.89 mA
c) 0.59 mA
d) 0.3 mA
View Answer

Answer: b
Explanation:

10. A depletion type N channel MOSFEt with k_nW/L = 2 mA/V² and V_t = 3V has its source and gate grounded. For V_d = 0.1V and neglecting channel length modulating effect. In which region is the triode operating?
a) Triode region
b) End of saturation region
c) Saturation region
d) None of the mentioned
View Answer

Answer: a
Explanation:

Sanfoundry Global Education & Learning Series – Electronic Devices and Circuits.

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