# Electronic Devices and Circuits Questions and Answers – Biasing in MOS Amplifier Circuit

This set of Electronic Devices and Circuits Problems focuses on “Biasing in MOS Amplifier Circuit”.

1. A discrete MOSFET common source amplifier has Rin = 2 MΩ, gmm = 4mA/V, ro = 100 kΩ, RD = 10 kΩ, Cgs = 2pF and Cgd = 0.5pF. The amplifier is fed from a voltage source with an internal resistance of 500 kΩ and Is connected to the a load of 10 kΩ. The value of the overall mixed gain AM is?
a) -15.2 V/V
b) -16.2 V/V
c) -17.2 V/V
d) -18.2 V/V

Explanation:

2. A discrete MOSFET common source amplifier has Rin = 2 MΩ, gmm = 4mA/V, ro = 100 kΩ, RD = 10 kΩ, Cgs = 2pF and Cgd = 0.5pF. The amplifier is fed from a voltage source with an internal resistance of 500 kΩ and Is connected to the a load of 10 kΩ. The upper 3-db frequency fH is?
a) 11.1 kHz
b) 22.1 kHz
c) 33.1 kHz
d) 44.1 kHz

Explanation:

3. The amplifier in the figure shown below is biased to operate at ID = 1mA and gm = 1mA/V. Find the midband gain.

a) 0.43 V/V
b) 1.43 V/V
c) 2.43 V/V
d) 3.43 V/V

Explanation:

4. The amplifier in the figure shown below is biased to operate at ID = 1mA and gm = 1mA/V. Find the value of CS that places FL at 10Hz.

a) 6.57 µF
b) 12.57 µF
c) 18.57 µF
d) 24.57 µF

Explanation:

5. In the NMOS transistor of the circuit shown below is biased to have gm = 1mA/V and r0 = 100 kΩ. Find AM.

a) 1.02 V/V
b) 2.04 V/V
c) 3.06 V/V
d) 4.08 V/V

Explanation:

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6. In the NMOS transistor of the circuit shown below is biased to have gm = 1mA/V and r0 = 100 kΩ. Find fH if Cgs = 1 pF and Cgd = 0.2 pF.

a) 875 kHz
b) 875 kHz
c) 875 kHz
d) 875 kHz

Explanation:

7. For a particular depletion mode NMOS device, Vt = -2V, kn W/L = 200 µA/V2 and λ = 0.02V-1. For VDS = 2V. What is the drain current that flows
a) 104 µA
b) 208 µA
c) 312µA
d) 416 µA

Explanation:

8. For a particular depletion mode NMOS device, Vt = -2V, kn W/L = 200 µA/V2 and λ = 0.02V-1. For VDS = 2V. What is the value of the drain current if both L and W are doubled?
a) 408 µA
b) 412 µA
c) 416 µA
d) 420 µA

Explanation:

9. A depletion type N channel MOSFEt with knW/L = 2 mA/V2 and Vt = 3V has its source and gate grounded. For Vd = 0.1V and neglecting channel length modulating effect. Find drain current.
a) 1.18 mA
b) 0.89 mA
c) 0.59 mA
d) 0.3 mA

Explanation:

10. A depletion type N channel MOSFEt with knW/L = 2 mA/V2 and Vt = 3V has its source and gate grounded. For Vd = 0.1V and neglecting channel length modulating effect. In which region is the triode operating?
a) Triode region
b) End of saturation region
c) Saturation region
d) None of the mentioned

Explanation:

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